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1 ? fn7355.1 EL5611, el5811 60mhz rail-to-rail input-output v com amplifiers the EL5611 and el5811 are low power, high voltage rail-to- rail input-output amplifiers targeted primarily at v com applications in tft-lcd displays. the EL5611 contains six amplifiers, and the el5811 contains eight amplifiers. operating on supplies ranging from 5v to 15v, while consuming only 2.5ma per amplifier, the EL5611 and el5811 have a bandwidth of 60mhz (-3db). they also provide common mode input ability beyond the supply rails, as well as rail-to-rail output capability. this enables these amplifiers to offer maximum dynamic range at any supply voltage. the EL5611 and el5811 also feature fast slewing and settling times, as well as a high output drive capability of 65ma (sink and source). in addition to v com applications, these features make these amplifiers ideal for high speed filtering and signal conditioning application. other applications include battery power, portable devices, and anywhere low power consumption is important. the EL5611 is available in 8-pin msop and 8-pin hmsop packages. the el5811 is available in space-saving 28-pin htssop packages.these ampl ifiers operate over a temperature range of -40c to +85c. features ? 60mhz -3db bandwidth ? supply voltage = 4.5v to 16.5v ? low supply current (per amplifier) = 2.5ma ? high slew rate = 75v/s ? unity-gain stable ? beyond the rails input capability ? rail-to-rail output swing ? 180ma output short current ? pb-free plus anneal available (rohs compliant) applications ? tft-lcd panels ?v com amplifiers ? drivers for a-to-d converters ? data acquisition ? video processing ? audio processing ? active filters ? test equipment ? battery-powered applications ? portable equipment ordering information part number package tape & r e e l p k g. d w g. # EL5611ire 24-pin htssop - mdp0048 EL5611ire-t7 24-pin htssop 7? mdp0048 EL5611ire-t13 24-pin htssop 13? mdp0048 el5811irez (see note) 28-pin htssop (pb-free) - mdp0048 el5811irez-t7 (see note) 28-pin htssop (pb-free) 7? mdp0048 el5811irez-t13 (see note) 28-pin htssop (pb-free) 13? mdp0048 el5811irez (see note) 28-pin htssop (pb-free) - mdp0048 el5811irez-t7 (see note) 28-pin htssop (pb-free) 7? mdp0048 el5811irez-t13 (see note) 28-pin htssop (pb-free) 13? mdp0048 note: intersil pb-free plus anneal products employ special pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are rohs compliant and compatible with both snpb and pb-free soldering operations. intersil pb-free products are msl classified at pb-free peak reflow temperatures that meet or exceed the pb-free requirements of ipc/jedec j std-020. ordering information (continued) part number package tape & reel pkg. dwg. # data sheet august 3, 2005 caution: these devices are sensitive to electrosta tic discharge; follow proper ic handling procedures. 1-888-intersil or 1-888-468-3774 | intersil (and design) is a registered trademark of intersil americas inc. copyright intersil americas inc. 2004, 2005. all rights reserved all other trademarks mentioned are the property of their respective owners.
2 fn7355.1 august 3, 2005 pinouts EL5611 (24-pin htssop) top view el5811 (28-pin htssop) top view vdd voutf vinf- vinf+ voute vouta vina- vina+ vss voutb vine- vine+ vss voutd+ vinb- vinb+ vdd vinc+ vinc- voutd nc voutc nc voutd- 1 2 3 4 16 15 14 13 5 6 7 12 11 9 8 10 20 19 18 17 24 23 22 21 vinh+ vinh- vouth voutg ving- vdd vina+ vina- vouta voutb ving+ vss vss vinf+ vinb- vinb+ vinc+ vinc- voutc voutf voute vine- vine+ voutd vind- vind+ vdd vinf- 1 2 3 4 28 27 26 25 5 6 7 24 23 22 8 21 9 10 20 19 11 12 13 18 17 16 14 15 EL5611, el5811
3 fn7355.1 august 3, 2005 absolute maxi mum ratings (t a = 25c) supply voltage between v s + and v s - . . . . . . . . . . . . . . . . . . . .+18v input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . v s - - 0.5v, v s +0.5v maximum continuous output current . . . . . . . . . . . . . . . . . . . 65ma maximum die temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125c storage temperature . . . . . . . . . . . . . . . . . . . . . . . .-65c to +150c ambient operating temperature . . . . . . . . . . . . . . . .-40c to +85c power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see curves caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. important note: all parameters having min/max specifications are guaranteed. typical values are for information purposes only. u nless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: t j = t c = t a electrical specifications v s + = +5v, v s - = -5v, r l = 1k ? to 0v, t a = 25c, unless otherwise specified parameter description conditions min typ max unit input characteristics v os input offset voltage v cm = 0v 3 15 mv tcv os average offset voltage drift (note 1) 7 v/c i b input bias current v cm = 0v 2 60 na r in input impedance 1g ? c in input capacitance 2pf cmir common-mode input range -5.5 +5.5 v cmrr common-mode rejection ratio for v in from -5.5v to 5.5v 50 70 db a vol open-loop gain -4.5v v out 4.5v 62 70 db output characteristics v ol output swing low i l = -5ma -4.92 -4.85 v v oh output swing high i l = 5ma 4.85 4.92 v i sc short-circuit current 180 ma i out output current 65 ma power supply performance psrr power supply rejection ratio v s is moved from 2.25v to 7.75v 60 80 db i s supply current (per amplifier) no load 2.5 3.75 ma dynamic performance sr slew rate (note 2) -4.0v v out 4.0v, 20% to 80% 75 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 80 ns bw -3db bandwidth 60 mhz gbwp gain-bandwidth product 32 mhz pm phase margin 50 cs channel separation f = 5mhz 110 db d g differential gain (note 3) r f = r g = 1k ? and v out = 1.4v 0.17 % d p differential phase (note 3) r f = r g = 1k ? and v out = 1.4v 0.24 notes: 1. measured over operating temperature range. 2. slew rate is measured on rising and falling edges. 3. ntsc signal generator used. EL5611, el5811
4 fn7355.1 august 3, 2005 electrical specifications v s + = +5v, v s - = 0v, r l = 1k ? to 2.5v, t a = 25c, unless otherwise specified parameter description condition min typ max unit input characteristics v os input offset voltage v cm = 2.5v 3 15 mv tcv os average offset voltage drift (note 4) 7 v/c i b input bias current v cm = 2.5v 2 60 na r in input impedance 1g ? c in input capacitance 2pf cmir common-mode input range -0.5 +5.5 v cmrr common-mode rejection ratio for v in from -0.5v to 5.5v 45 66 db a vol open-loop gain 0.5v v out 4.5v 62 70 db output characteristics v ol output swing low i l = -5ma 80 150 mv v oh output swing high i l = 5ma 4.85 4.92 v i sc short-circuit current 180 ma i out output current 65 ma power supply performance psrr power supply rejection ratio v s is moved from 4.5v to 15.5v 60 80 db i s supply current (per amplifier) no load 2.5 3.75 ma dynamic performance sr slew rate (note 5) 1v v out 4v, 20% to 80% 75 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 80 ns bw -3db bandwidth 60 mhz gbwp gain-bandwidth product 32 mhz pm phase margin 50 cs channel separation f = 5mhz 110 db d g differential gain (note 6) r f = r g = 1k ? and v out = 1.4v 0.17 % d p differential phase (note 6) r f = r g = 1k ? and v out = 1.4v 0.24 notes: 4. measured over operating temperature range. 5. slew rate is measured on rising and falling edges. 6. ntsc signal generator used. EL5611, el5811
5 fn7355.1 august 3, 2005 electrical specifications v s + = +15v, v s - = 0v, r l = 1k ? to 7.5v, t a = 25c, unless otherwise specified parameter description condition min typ max unit input characteristics v os input offset voltage v cm = 7.5v 3 15 mv tcv os average offset voltage drift (note 7) 7 v/c i b input bias current v cm = 7.5v 2 60 na r in input impedance 1g ? c in input capacitance 2pf cmir common-mode input range -0.5 +15.5 v cmrr common-mode rejection ratio for v in from -0.5v to 15.5v 53 72 db a vol open-loop gain 0.5v v out 14.5v 62 70 db output characteristics v ol output swing low i l = -5ma 80 150 mv v oh output swing high i l = 5ma 14.85 14.92 v i sc short-circuit current 180 ma i out output current 65 ma power supply performance psrr power supply rejection ratio v s is moved from 4.5v to 15.5v 60 80 db i s supply current (per amplifier) no load 2.5 3.75 ma dynamic performance sr slew rate (note 8) 1v v out 14v, 20% to 80% 75 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 80 ns bw -3db bandwidth 60 mhz gbwp gain-bandwidth product 32 mhz pm phase margin 50 cs channel separation f = 5mhz 110 db d g differential gain (note 9) r f = r g = 1k ? and v out = 1.4v 0.16 % d p differential phase (note 9) r f = r g = 1k ? and v out = 1.4v 0.22 notes: 7. measured over operating temperature range 8. slew rate is measured on rising and falling edges 9. ntsc signal generator used EL5611, el5811
6 fn7355.1 august 3, 2005 typical performance curves figure 1. input offset voltage distribut ion figure 2. input offset voltage drift figure 3. input offset voltage vs temperatur e figure 4. input bias current vs temperature figure 5. output high voltage vs temperature figure 6. output low voltage vs temperature 200 quantity (amplifiers) input offset voltage (mv) 0 -12 500 400 100 300 -10 -8 -6 -4 -2 -0 2 4 6 8 10 12 typical production distribution v s =5v t a =25c input offset voltage drift, tcv os (v/c) 1 3 5 7 9 11 13 15 17 19 21 5 quantity (amplifiers) 0 25 15 20 10 v s =5v typical production distribution 0 0.5 input offset voltage (mv) temperature (c) -0.5 1 -10 -50 30 70 110 150 1.5 2 0 input bias current (a) temperature (c) -0.008 0.008 -0.004 -0.012 0.004 -50 -10 30 70 110 150 v s =5v 4.88 4.90 output high voltage (v) 4.86 4.96 4.92 4.94 v s =5v i out =5ma temperature (c) -10 -50 30 70 110 150 -4.91 -4.87 output low voltage (v) -4.95 -4.85 -4.89 -4.93 v s =5v i out =5ma temperature (c) -10 -50 30 70 110 150 EL5611, el5811
7 fn7355.1 august 3, 2005 figure 7. open-loop gain vs temperature figure 8. slew rate vs temperature figure 9. supply current per amplifier vs supply voltage figure 10. supply current per amplifier vs temperature figure 11. differential gain figure 12. differential phase typical performance curves (continued) 70 open-loop gain (db) 75 60 65 v s =5v r l =1k ? temperature (c) -10 -50 30 70 110 150 75 76 slew rate (v/s) 74 78 73 72 77 v s =5v temperature (c) -10 -50 30 70 110 150 1.7 2.5 supply current (ma) supply voltage (v) 1.5 2.9 2.1 2.3 2.7 1.9 t a =25c 8 4 121620 2.45 2.5 supply current (ma) 2.4 2.6 2.65 2.55 2.7 v s =5v temperature (c) -10 -50 30 70 110 150 -0.16 -0.04 differential gain (%) ire -0.18 0 -0.12 -0.06 -0.02 -0.14 0 100 200 -0.08 -0.1 v s =5v a v =2 r l =1k ? 0.2 differential phase () ire 0 0.3 0.15 0.25 0 100 200 0.1 0.05 EL5611, el5811
8 fn7355.1 august 3, 2005 figure 13. harmonic distortion vs v op-p figure 14. open loop gain and phase figure 15. frequency response for various r l figure 16. frequency response for various c l figure 17. closed loop output impedance fig ure 18. maximum output swing vs frequency typical performance curves (continued) -80 -40 distortion (db) v op-p (v) -90 -30 -60 -50 -70 2 04610 8 v s =5v a v =2 r l =1k ? freq=1mhz 3rd hd 2nd hd gain (db) 60 1k frequency (hz) phase () 40 20 250 190 130 70 10 -50 10k 100k 1m 10m 100m 80 0 -20 gain phase magnitude (normalized) (db) 5 3 frequency (hz) 1 -1 -3 -5 100k 1m 100m 1k ? 10m 150 ? v s =5v a v =1 c load =0pf 560 ? magnitude (normalized) (db) frequency (hz) 25 15 5 -5 -15 -25 100k 1m 100m 10m 1000pf 100pf 47pf 10pf v s =5v a v =1 r l =1k ? output impedance ( ? ) 400 350 frequency (hz) 300 250 200 0 10k 100k 100m 1m 10m 150 100 50 2 10 maximum output swing (v p-p ) frequency (khz) 0 12 6 8 4 100k 10k 1m 100m 10m v s =5v a v =1 r l =1k ? distortion <1% EL5611, el5811
9 fn7355.1 august 3, 2005 figure 19. cmrr figure 20. psrr figure 21. input voltage noise spectral density figure 22. channel separation figure 23. small-signal overshoot vs load capacitance figure 24. settling time vs step size typical performance curves (continued) cmrr (db) -15 frequency (hz) -45 -65 1k 10k 100m 1m 10m -55 100k -25 -35 0 psrr (db) -80 -60 -40 -20 psrr+ frequency (hz) 100 1k 10m 100k 1m 10k psrr- v s =5v t a =25c 10 100 voltage noise (nv/ hz) frequency (hz) 1 1k 100 1k 100m 1m 10m 100k 10k -60 xtalk (db) -160 -120 -100 -80 dual measured ch a to b quad measured ch a to d or b to c other combinations yield improved rejection v s =5v r l =1k ? a v =1 v in =110mv rms -140 frequency (hz) 1k 10k 10m 30m 1m 100k load capacitance (pf) overshoot (%) v s =5v a v =1 r l =1k ? v in =50mv t a =25c 10 1k 100 100 0 40 60 80 20 -4 4 step size (v) settling time (ns) -5 5 0 2 -2 65 55 75 105 95 v s =5v a v =1 r l =1k ? 85 3 -1 1 -3 0.1% 0.1% EL5611, el5811
10 fn7355.1 august 3, 2005 figure 25. large signal trans ient response figure 26. smal l signal transient response typical performance curves (continued) 50ns/div 1v step v s =5v t a =25c a v =1 r l =1k ? 50ns/div 100mv step v s =5v t a =25c a v =1 r l =1k ? pin descriptions EL5611 el5811 name function equivalent circuit 1, 5, 9, 14, 20, 23 4, 5, 10, 11, 17, 18, 25, 26 voutx amplifiers output 2, 3, 6, 7, 9, 10, 15, 16, 21, 22 2, 3, 6, 7, 8, 9, 12. 13, 15, 16, 19, 20, 23, 24, 27, 28 vinx amplifiers input 8, 24 1, 14 vs+ positive power supply 24, 17 21, 22 vs- negative power supply 12, 13 nc not connected v s+ gnd v s- circuit 1 v s+ v s- circuit 2 EL5611, el5811
11 fn7355.1 august 3, 2005 applications information product description the EL5611 and el5811 voltage feedback amplifiers are fabricated using a high voltage cmos process. they exhibit rail-to-rail input and output capability, are unity gain stable and have low power consumption (2.5ma per amplifier). these features make the EL5611, and el5811 ideal for a wide range of general-purpose applications. connected in voltage follower mode and driving a load of 1k ? , the EL5611 and el5811 have a -3db bandwidth of 60mhz while maintaining a 75v/s slew rate. the EL5611 a six channel amplifier, and the el5811 an 8 channel amplifier. operating voltage, input, and output the EL5611and el5811 are specified with a single nominal supply voltage from 5v to 15v or a split supply with its total range from 5v to 15v. correct operation is guaranteed for a supply range of 4.5v to 16.5v. most EL5611 and el5811 specifications are stable over both the full supply range and operating temperatures of -4 0c to +85c. parameter variations with operating vo ltage and/or temperature are shown in the typical performance curves. the input common-mode voltage range of the EL5611 and el5811 extends 500mv beyond the supply rails. the output swings of the EL5611 and el5811 typically extend to within 100mv of positive and negative supply rails with load currents of 5ma. decreasing load currents will extend the output voltage range even closer to the supply rails. figure 27 shows the input and output waveforms for the device in the unity-gain configuration. operation is from 5v supply with a 1k ? load connected to gnd. the input is a 10v p-p sinusoid. the output voltage is approximately 9.8v p-p . short circuit current limit the EL5611 and el5811 will limit the short circuit current to 180ma if the output is directly shorted to the positive or the negative supply. if an output is shorted indefinitely, the power dissipation could easily increase such that the device may be damaged. maximum reliability is maintained if the output continuous current never exceeds 65ma. this limit is set by the design of the internal metal interconnects. output phase reversal the EL5611 and el5811 are immune to phase reversal as long as the input voltage is limited from v s - -0.5v to v s + +0.5v. figure 28 shows a photo of the output of the device with the input voltage driven beyond the supply rails. although the device's output wil l not change phase, the input's overvoltage should be avoided. if an input voltage exceeds supply voltage by more than 0.6v, electrostatic protection diodes placed in th e input stage of the device begin to conduct and overvoltage damage could occur. power dissipation with the high-output drive capability of the EL5611 and el5811 amplifiers, it is possible to exceed the 125c 'absolute-maximum junction temperature' under certain load current conditions. therefore, it is important to calculate the maximum junction temperature for the application to determine if load conditions need to be modified for the amplifier to remain in the safe operating area. the maximum power dissipation allowed in a package is determined according to: where: ?t jmax = maximum junction temperature ?t amax = maximum ambient temperature ? ja = thermal resistance of the package ?p dmax = maximum power dissipation in the package the maximum power dissipation actually produced by an ic is the total quiescent supply current times the total power supply voltage, plus the power in the ic due to the loads, or: output input 5v 5v 10s v s = 5v, t a = 25c, a v = 1, v in = 10v p-p figure 27. operation with rail-to-rail input and output 1v 1v 10s v s = 2.5v, t a = 25c, a v = 1, v in = 6v p-p figure 28. operation with beyond-the-rails input p dmax t jmax t amax ? ja -------------------------------------------- - = p dmax iv [ s i smax v ( s +v out i ) i load i ? + ] = EL5611, el5811
12 all intersil u.s. products are manufactured, asse mbled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications ca n be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corpor ation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com fn7355.1 august 3, 2005 when sourcing, and: when sinking, where: ? i = 1 to 6 for EL5611 and 1 to 8 for el5811 ?v s = total supply voltage ?i smax = maximum supply current per amplifier ?v out i = maximum output voltage of the application ?i load i = load current if we set the two p dmax equations equal to each other, we can solve for r load i to avoid device overheat. figures 29 and 30 provide a convenient way to see if the device will overheat. the maximum safe power dissipation can be found graphically, based on the package type and the ambient temperature. by using t he previous equation, it is a simple matter to see if p dmax exceeds the device's power derating curves. to ensure proper operation, it is important to observe the recommended derating curves shown in figures 29 & 30. unused amplifiers it is recommended that any unused amplifiers in a dual and a quad package be configured as a unity gain follower. the inverting input should be dire ctly connected to the output and the non-inverting input tied to the ground plane. power supply bypassing and printed circuit board layout the EL5611 and el5811 can provide gain at high frequency. as with any high-frequency device, good printed circuit board layout is necessary for optimum performance. ground plane construction is highly recommended, lead lengths should be as short as possible and the power supply pins must be well bypassed to reduce the risk of oscillation. for normal single supply operation, where the v s - pin is connected to ground, a 0.1f ceramic capacitor should be placed from v s + to pin to v s - pin. a 4.7f tantalum capacitor should then be connected in parallel, placed in the region of the amplifie r. one 4.7f capacitor may be used for multiple devices. this same capacitor combination should be placed at each supply pin to gr ound if split supplies are to be used. p dmax iv [ s i smax v ( out iv s - ) i load i ? + ] = figure 29. package power dissipation vs ambient temperature jedec jesd51-7 high effective thermal conductivity test board - htssop exposed diepad soldered to pcb per jesd51-5 3.5 3 2.5 1.5 1 0.5 0 0 255075100 150 ambient temperature (c) power dissipation (w) 3.030w ja =33c/w htssop24 ja =30c/w htssop28 125 85 2 3.333w figure 30. package power dissipation vs ambient temperature jedec jesd51-3 low effective thermal conductivity test board 1 0.9 0.6 0.4 0.3 0.2 0.1 0 0 255075100 150 ambient temperature (c) power dissipation (w) 85 0.8 0.5 0.7 125 833mw ja =120c/w htssop24 ja =110c/w htssop28 909mw EL5611, el5811

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